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| SEMiX251GD126HDs Absolute Maximum Ratings Symbol IGBT VCES IC ICnom ICRM ICRM = 2xICnom VCC = 600 V VGE 20 V Tj = 125 C VCES 1200 V VGES tpsc Tj = 150 C Tc = 25 C Tc = 80 C 1200 242 170 150 300 -20 ... 20 10 -40 ... 150 Tc = 25 C Tc = 80 C 207 143 150 IFRM = 2xIFnom tp = 10 ms, sin 180, Tj = 25 C 300 1000 -40 ... 150 600 -40 ... 125 AC sinus 50Hz, t = 1 min 4000 V A A A A V s C A A A A A C A C V Conditions Values Unit SEMiX(R)13 Trench IGBT Modules SEMiX251GD126HDs Tj Inverse diode IF IFnom IFRM IFSM Tj Module It(RMS) Tstg Visol Preliminary Data Features * Homogeneous Si * Trench = Trenchgate technology * VCE(sat) with positive temperature coefficient * High short circuit capability * UL recognised file no. E63532 Tj = 150 C Typical Applications * AC inverter drives * UPS * Electronic Welding Characteristics Symbol IGBT VCE(sat) VCE0 rCE VGE(th) ICES Cies Coes Cres QG RGint td(on) tr Eon td(off) tf Eoff Rth(j-c) Rth(j-s) per IGBT per IGBT IC = 150 A VGE = 15 V chiplevel Tj = 25 C Tj = 125 C Tj = 25 C Tj = 125 C VGE = 15 V VGE=VCE, IC = 6 mA VGE = 0 V VCE = 1200 V VCE = 25 V VGE = 0 V VGE = - 8 V...+ 15 V Tj = 25 C VCC = 600 V IC = 150 A Tj = 125 C RG on = 1 RG off = 1 Tj = 25 C Tj = 125 C f = 1 MHz f = 1 MHz f = 1 MHz 10.8 0.56 0.49 1200 5.00 250 45 19 525 100 22 0.15 Tj = 25 C Tj = 125 C 5 1.7 2.00 1 0.9 4.7 7.3 5.8 0.1 2.1 2.45 1.2 1.1 6.0 9.0 6.5 0.3 V V V V m m V mA mA nF nF nF nC ns ns mJ ns ns mJ K/W K/W Remarks * Case temperatur limited to TC=125C max. * Not for new design Conditions min. typ. max. Unit GD (c) by SEMIKRON Rev. 0 - 02.12.2008 1 SEMiX251GD126HDs Characteristics Symbol Conditions Tj = 25 C Tj = 125 C Tj = 25 C Tj = 125 C Tj = 25 C Tj = 125 C IF = 150 A Tj = 125 C di/dtoff = 3950 A/s T = 125 C j VGE = -15 V Tj = 125 C VCC = 600 V per diode per diode 20 res., terminal-chip per module to heat sink (M5) to terminals (M6) 3 2.5 TC = 25 C TC = 125 C 0.7 1 0.04 5 5 350 0,493 5% 3550 2% 0.9 0.7 3.3 4.7 min. typ. 1.6 1.6 1 0.8 4.0 5.3 190 35 14.5 max. 1.8 1.8 1.1 0.9 4.7 6.0 Unit V V V V m m A C mJ Inverse diode VF = VEC IF = 150 A VGE = 0 V chiplevel VF0 rF IRRM SEMiX(R)13 Trench IGBT Modules SEMiX251GD126HDs Qrr Err Rth(j-c) Rth(j-s) Module LCE RCC'+EE' Rth(c-s) Ms Mt w 0.28 K/W K/W nH m m K/W Nm Nm Nm g Preliminary Data Features * Homogeneous Si * Trench = Trenchgate technology * VCE(sat) with positive temperature coefficient * High short circuit capability * UL recognised file no. E63532 Typical Applications * AC inverter drives * UPS * Electronic Welding Temperature sensor R100 B100/125 Tc=100C (R25=5 k) R(T)=R100exp[B100/125(1/T-1/T100)]; T[K]; k K Remarks * Case temperatur limited to TC=125C max. * Not for new design GD 2 Rev. 0 - 02.12.2008 (c) by SEMIKRON SEMiX251GD126HDs Fig. 1 Typ. output characteristic, inclusive RCC'+ EE' Fig. 2 Rated current vs. temperature IC = f (TC) Fig. 3 Typ. turn-on /-off energy = f (IC) Fig. 4 Typ. turn-on /-off energy = f (RG) Fig. 5 Typ. transfer characteristic Fig. 6 Typ. gate charge characteristic (c) by SEMIKRON Rev. 0 - 02.12.2008 3 SEMiX251GD126HDs Fig. 7 Typ. switching times vs. IC Fig. 8 Typ. switching times vs. gate resistor RG Fig. 9 Typ. transient thermal impedance Fig. 10 Typ. CAL diode forward charact., incl. RCC'+EE' Fig. 11 Typ. CAL diode peak reverse recovery current Fig. 12 Typ. CAL diode recovery charge 4 Rev. 0 - 02.12.2008 (c) by SEMIKRON SEMiX251GD126HDs SEMiX 13 GD This is an electrostatic discharge sensitive device (ESDS), international standard IEC 60747-1, Chapter IX This technical information specifies semiconductor devices but promises no characteristics. No warranty or guarantee expressed or implied is made regarding delivery, performance or suitability. (c) by SEMIKRON Rev. 0 - 02.12.2008 5 |
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